Interconnection substrates for interconnection between circuit modules, and methods of manufacture

ABSTRACT

An interposer ( 110 ) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs  112 ). The interposer includes a substrate made of multiple layers ( 110.   i ). Each layer can be a substrate ( 110 S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure ( 310 ) made of vertical layers ( 310.   i ) corresponding to the interposers&#39; layers. The structure is diced along horizontal planes ( 314 ) to provide the interposers. An interposer&#39;s vertical conductive lines (similar to through-substrate vias) can be formed on the substrates&#39; surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates&#39; surfaces before the substrates are attached to each other. Other embodiments are also provided.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a division of U.S. patent application Ser.No. 14/533,728, filed on Nov. 5, 2014, incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present disclosure relates to electronic technology, and moreparticularly to substrates used to connect semiconductor integratedcircuits to each other and to other circuits.

Integrated circuits (ICs) have tiny, closely-positioned contact padsthat are difficult to connect to other circuits because the contact padscan be shorted to each other (by solder for example), can be misalignedwith the other circuits due to warpage of circuit structures, and can bebroken off from the other circuits by stresses arising from thermalexpansion.

The ICs and other circuits can be interconnected through a commonsubstrate such as a multi-layer ceramic interposer 110 (FIG. 1A) of thekind described in U.S. Pat. No. 7,833,370 issued to Kawamura et al. onNov. 16, 2010. In FIG. 1A, ICs 120 have contact pads 120C attached tocontact pads 110C of interposer 110 by connections 124 which may besolder, adhesive, or some other type. Interposer 110 includes conductivelines that interconnect the contact pads 110C in a desired pattern. Theconductive lines include horizontal conductive lines 110LH and verticalconductive vias 110LV. In this example, interposer 110 has contact pads110C both on top and bottom; the bottom contact pads can be connected toanother substrate such as a printed circuit board (PCB) 114, byconnections such as 124′. We call substrate 110 an “interposer” becauseit has contact pads both on top and bottom. In the past, the term“interposer” was used if contact pads 110C were differently spaced ontop than the bottom: the top contact pads 110C can be closely-spaced tomatch the ICs' miniature spacings between pads 120C, while the bottomcontact pads 110C can be farther apart to match coarser fabricationtechnology such as used for PCBs. However, in more recent use, the term“interposer” can denote any substrate used to interconnect othercircuits and having contact pads both on top and bottom.

The interposer 110 of FIG. 1A has two layers 110.1, 110.2. FIG. 1B is anexploded perspective view of the two layers, and FIG. 1A shows acut-away view obtained by cutting away the front part of the interposerby a vertical plane A-A (parallel to the XZ plane of an orthogonal XYZcoordinate system). The interposer is shown in a horizontal position,i.e. extending along a horizontal XY plane. Each layer 110.i (110.1,110.2) includes a ceramic sheet 110S extending horizontally. In eachlayer 110.i, the horizontal lines 110LH are on top of the ceramic sheet,and vertical vias 110LV pass through the ceramic sheet to connect thehorizontal lines 110LH to underlying features. The vertical vias 110LVare formed by punching holes in the “green” ceramic (i.e. before theceramic is fired) and filling the holes with a conductive paste.

SUMMARY

This section summarizes some features of the invention. Other featuresmay be described in the subsequent sections.

Some embodiments provide multi-layer interposers and other structureswith novel arrangement of layers. Some embodiments are described below.The invention is defined by the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective cut-away view of integrated circuits attachedto an interposer according to prior art.

FIG. 1B is an exploded perspective view of the structure of FIG. 1A.

FIG. 2 is a perspective cut-away view of a multi-layer substrate whichprovides an interposer, or can be augmented to provide an interposer,according to some embodiments of the present invention.

FIG. 3 is a perspective cut-away view of a structure that can beseparated into multiple multi-layer substrates each of which provides aninterposer, or can be augmented to provide an interposer, according tosome embodiments of the present invention.

FIGS. 4A and 4B are perspective cut-away views of integrated circuitsattached to interposers according to some embodiments of the presentinvention.

FIG. 5A is a perspective cut-away view of one layer of a multi-layersubstrate which provides an interposer, or can be augmented to providean interposer, according to some embodiments of the present invention.

FIG. 5B is an exploded cross-sectional view a multi-layer substratewhich provides an interposer, or can be augmented to provide aninterposer, according to some embodiments of the present invention.

FIG. 6A is a perspective view of a substrate for one layer of astructure that can be separated into multiple multi-layer substrateseach of which provides an interposer, or can be augmented to provide aninterposer, according to some embodiments of the present invention.

FIG. 6B is a side view of the layer of FIG. 8A in the process offabrication according to some embodiments of the present invention.

FIGS. 6C and 7 are side views of structures that can be separated intomultiple multi-layer substrates each of which provides an interposer, orcan be augmented to provide an interposer, according to some embodimentsof the present invention.

FIG. 8A is a side view of a layer of a structure that can be separatedinto multiple multi-layer substrates each of which provides aninterposer, or can be augmented to provide an interposer according tosome embodiments of the present invention.

FIG. 8B is a side view of a structure that can be separated intomultiple multi-layer substrates each of which provides an interposer, orcan be augmented to provide an interposer, according to some embodimentsof the present invention.

FIG. 9A is a perspective view of a structure that can be separated intomultiple multi-layer substrates each of which provides an interposer, orcan be augmented to provide an interposer, according to some embodimentsof the present invention.

FIG. 9B is a perspective view of the multi-layer substrates obtainedfrom the structure of FIG. 9A.

FIG. 10 is a perspective view of a structure that can be separated intomultiple multi-layer substrates each of which provides an interposer, orcan be augmented to provide an interposer, according to some embodimentsof the present invention.

DESCRIPTION OF SOME EMBODIMENTS

The embodiments described in this section illustrate but do not limitthe invention. The invention is defined by the appended claims.

One aspect of the present invention relates to the layout of conductivelines in an interposer or other substrate used to interconnect ICs andother circuits. More particularly, in addition to vertical vias such as110LV in FIG. 1A, some embodiments of the present disclosure includediagonal lines (non-vertical lines extending downward) and other shapesand features that can be formed on ceramic and non-ceramic substrates.FIG. 2 shows exemplary features 110L for a two-layer interposer. Theinterposer is shown as extending horizontally to facilitate comparisonwith FIG. 1A; FIG. 2 a cut-away view obtained using a vertical sectionalplane like in FIG. 1A. Of note, in FIG. 2, layers 110.1 and 110.2 arearranged differently than in FIG. 1A: the layers of FIG. 1A extendhorizontally and are stacked on top of one another; but the layers ofFIG. 2 are stacked one in front of the other (layer 110.2 is in front of110.1). This architecture facilitates fabrication of conductive linesand other features on the vertical surfaces of substrates 110S. Theinterposer of the type of FIG. 2 may have vertical conductive lines(vias) such as 110L.10, and the lines may extend through the entireheight (Z-dimension) of the two-layer interposer. In addition, theinterposer may have diagonal conductive lines such as 110L.1, alsopossibly extending the full height; diagonal lines may provide shorterconductive paths than the lines made of vertical and horizontalsegments, so as to achieve high speed or low power consumption, toprovide more interconnect routes, or for other purposes. Features 110Lmay include capacitors (note capacitor plate 110L.2), resistors,inductors, diodes, transistors, and other circuit elements. Features110L may include a multi-level redistribution layer (RDL, not shown inFIG. 2) with multiple levels of conductive features separated bydielectric layers. Features 110L may include non-conductive elements,e.g. non-conductive semiconductor features for transistors, diodes, etc.Features 110L may also include non-circuit elements, e.g. heat spreadersmade of highly thermally conductive materials (possibly metal or othermaterials, possibly more thermally conductive than the adjacentsubstrates 110S); such heat spreaders conduct heat from inside of theinterposer to the interposer's boundary. For example, feature 110L.10could be a heat spreader which is not part of any circuit.

Some embodiments provide novel manufacturing methods to facilitatefabrication of such features, possibly in batch (i.e. simultaneously formultiple interposers). Thus, in some embodiments, multiple interposerssuch as 110 are fabricated as part of a single structure 310 (FIG. 3).In the example of FIG. 3, the structure will provide four interposes 110when diced along the horizontal planes 314. Like each interposer 110,structure 310 is a two-layer structure, with layers 310.1, 310.2extending vertically. Layer 310.1 will provide the layers 110.1 of allthe interposers, and layer 310.2 will provide the layers 110.2 of allthe interposers. More than two layers can be present.

Each layer 310.i (310.1, 310.2) includes features 310L which provide thefeatures 110L for the corresponding interposer layers 110.i. Thefeatures 310L are formed on large vertical surfaces of layers 310.i, sothese features are not limited to vertical vias as in FIG. 1A. Suchfeatures may include horizontal lines (such as 110L.3 and 110L.3′ inFIG. 2), and may include vertical and diagonal lines and other featuresas explained above. Additional horizontal features can be fabricatedafter the interposer singulation (i.e. after dicing along the planes314) on the large top and bottom interposer surfaces. For the interposerof FIG. 2, features formed after singulation on top of the interposerare shown as 110L.A in the examples of FIGS. 4A and 4B. These featuresmay include conductive lines (such as 110L.A1), contact pads (such as110L.AC), and may include resistors, transistors, capacitors, inductors,and other features. These features may extend over multiple layers 110.iin any direction; for example, a conductive line or a contact pad mayextend over multiple layers. Multiple levels of such features can beprovided, separated by dielectric 510 (FIG. 4B). Similar features can beprovided on the interposers' bottom surfaces.

These interposers can be used in any desired manner. In FIG. 4A, an IC120 is attached to the interposer's top surface with contact pads facingup; the IC's contact pads are connected to the interposer's contact pads110C and/or 110L.AC by discrete wires 410. In FIG. 4B, IC 120.2 issimilarly connected; IC 120.1 is attached to the top surface in aflip-chip manner, with contact pads on the bottom that are attached tocontact pads 110L.AC (as in FIG. 1A). IC 120.1 may have additionalcontact pads on top (not shown) attached with wires to the interposer'scontact pads. The interposer can be used in other assemblies as known inthe art.

Still other features 110L can be provided by conductive vias (not shownin FIGS. 2-4; shown at 110L.100 in FIG. 5B discussed below) made inpossibly horizontal holes through substrates 110S of layers 110.i; suchvias can be formed before singulation by the same process as vias 110LVin FIG. 1A if the substrates 110S are ceramic, or by other processes.For example, if a substrate 110S is silicon or glass, the vias can beformed by TSV (through-substrate-via) technology; see e.g. U.S.pre-grant patent publication no. 2014/0175654 (Haba et al., Jun. 26,2014) incorporated herein by reference.

As noted above, FIGS. 2, 3, 4A, 4B are cut-away views: features 110L and310L of layers 110.2 and 310.2 are shown as exposed; but in the completestructure, these features can be covered by a protective layer (e.g.dielectric, possibly polyimide or other type). This is not limitinghowever: in some embodiments the features 110L, 310L are exposed in thefinal structure.

As is known, an interposer may have to be thin to provide shorterconductive paths between circuits below and above the interposer (e.g.between ICs 120 and PCB 114 in FIG. 1A). The interposers of FIGS. 2 and3 can be made thin simply by reducing the distance between the dicingplanes 314. The layers 110.i, 310.i can be thick because their thicknessdoes not contribute to the interposer thickness (the thickness of layers110.i, 310.i relates to the interposer's horizontal dimensions).Allowing greater thickness of each layer leads to relaxed manufacturingtolerances. For example, for a given horizontal area, one can providemore thinner layers or fewer thicker layers as needed to manufacturedesired circuitry.

In FIG. 3, all the interposers 110 are identical, but in otherembodiments non-identical interposers 110 may be formed in the samestructure 310; e.g. the interposers may have different circuitry 110Land/or different heights. Also, the planes 314 do not have to behorizontal. Of note, the terms “horizontal” and “vertical” are used tosimplify the description, but the interposers or other structures can beat any angle and any orientation. Some embodiments includenon-interposer substrates, i.e. substrates with contact pads only on oneside, or possibly other types of substrates.

FIGS. 5A, 5B illustrate an eight-layer interposer, with layers 110.1 to110.8. Layer 110.2 is the same as in FIG. 2, and is reproduced in FIG.5A. FIG. 5B is an exploded cross-sectional view of layers 110.1 to 110.8as seen in the horizontal cross section by plane 604 of FIG. 5A (plane604 is parallel to the XY plane). FIG. 5B is the bottom view of thiscross section. Further, the same view pertains to a structure 310 fromwhich the interposer is made. Indeed, as seen in FIG. 3, if a structure310 is cut by a horizontal sectional plane through an interposer 110,then this plane will pass only through that interposer 110 and no otherinterposer, so the sectional view of the structure 310 is the same asthe sectional view of the interposer. Therefore, FIG. 5B is a sectionalview of both the interposer 110 and the corresponding structure 310.

In FIG. 5B, each layer 110.i includes a substrate 110S made of ceramicor some other material. In layer 110.1, features 110L include amulti-level structure on substrate 110S of the kind described above(i.e. multiple levels of circuit elements separated by dielectric).

Layer 110.2 includes capacitor plate 110L.2 as in FIG. 2. Thecapacitor's other plate 110L.2′ is located on substrate 110S ofoverlying layer 110.3. Substrate 110S of layer 110.3 provides capacitordielectric.

Layer 110.4 has no features 110L other than a conductive via 110L.100going through the substrate. This via, together with a similar via110L.100 in layer 110.5, connects the capacitor plate 110L.2′ to afeature 610 in layer 110.5. Layer 110.4 could be omitted, or could beused for adhesion and/or barrier layer properties of its substrate 110S.

Via 110L.100 in substrate 110.5 can be made be any suitable process,e.g. as a TSV.

In layer 110.5, feature 610 is a MOS transistor gate. The transistor'ssource/channel/drain region 620 is a feature 110L of layer 110.6; thegate dielectric is provided by substrate 110S of layer 110.6. Thetransistor regions 610, 620 can be connected to contact pads 110C (suchas in FIG. 2 or 4) and/or other elements by lines or other features 110L(not shown) that are not in the cross-sectional plane of FIG. 5B.

Layer 110.7 has no features 110L, and can be an adhesive or barrierlayer as described above for layer 110.4. Layer 110.8 has features 110Lon the bottom of substrate 110S. In other embodiments, layer 110.8 hasno features 110L; layers 110.8 and 110.7 serve as protective layers forthe interposer.

The invention is not limited to the structure of FIG. 5B; for theexample, an interposer may have any number of layers, possibly thousandsof layers. Also, other types of features 110L can be present.

Substrates 110S of different layers can be made of the same or differentmaterials. Examples include partially cured (B-stage) epoxy, moldingcompounds, polyimide, ceramic, glass, etc., possibly thermallyconductive matrix materials with additives. For example, in someembodiments, all substrates 110S are ceramic; structure 310 can befabricated by methods described in the aforementioned U.S. Pat. No.7,833,370 incorporated herein by reference. Exemplary ceramic materialsfor substrates 110S include glass, alumina, zinc oxide, and others,possibly including or consisting of a ceramic matrix with fibers orother particles; appropriate materials are also described in theaforementioned U.S. Pat. No. 7,833,370. The ceramic substrates can bemanufactured by known techniques, e.g. glass powder spraying. Substrates110S can be made of a green ceramic tape, such as available for examplefrom Murata Manufacturing Company, Ltd. of Japan or DuPont of USA.Advantageously, some ceramic tapes have low shrinkage, possibly below10%. Substrates 110S of different layers 310.i may have the same ordifferent thicknesses; an exemplary ceramic substrate's thickness is 100to 200 microns, and such substrates 110S can be used to providethousands of layers in a single interposer; other thickness values arepossible, and a thickness can vary throughout the same layer 110.i.Non-ceramic materials are also possible as noted above.

In each layer 310.i, the features 310L can be made by known techniques,e.g. deposition (e.g. electroplating or other type), photolithographicpatterning, etching or laser oblation, and others. Vias 110L.100 can beformed as in the aforementioned U.S. Pat. No. 7,833,370 (punching holesin ceramic sheets), or by TSV technology for substrates 110S made ofsilicon, glass, or some other materials. Metal features can be depositedby printing—some printing technologies are simple and low cost. Suitableprinting technologies include rotogravure, roll-to-roll printing(including possibly R2R nanoimprint), stencil printing, laser assistedforward printing, nanotrasfer printing, microcontact printing.Semiconductor features such as 620 and other features can be formed fromorganic or inorganic semiconductor materials, possibly by lamination—seeU.S. Pre-Grant Patent Publication 2007/0004229 (Malajovich, Jan. 4,2007). The invention is not limited to these particulars.

In some embodiments, structure 310 is fabricated layer by layer asfollows. Substrate 110S of bottom layer 310.1 is stacked on an earlierfired ceramic substrate (not shown; see the aforementioned U.S. Pat. No.7,833,370). Then the features 310L of layer 310.1 are printed orotherwise formed. Then the next substrate 110S (of layer 310.2) isstacked on layer 310.1. Then features 310L of layer 310.2 are formed;and so on until the last layer. If the substrates 110S are ceramic, allthe substrates can be fired after the stack 310 is complete, oralternatively the structure can be fired at intermediate stages, beforecompletion of the stack. Low temperature firing (at below 1000° C.) isused in some embodiments, but high temperatures are used in others. Insome embodiments, one or more bottom layers are ceramic but one or moretop layers are non-ceramic, and the structure is fired after stackingall the ceramic layers but before stacking the non-ceramic layers.

Alternatively, for one or more layers 310.i, the features 310L can beformed before the layer is placed on the underlying layer or substrate.Features 310L can be formed on the top and bottom surfaces of asubstrate. Also, in ceramic embodiments, a layer 310.i can be firedbefore it is placed on the underlying layer or substrate.

FIG. 6A illustrates a substrate 110S of a layer 310.i in which at leastsome of features 310L will be formed before the layer is placed on theunderlying layer or substrate. The features 310L will be formed in thetop and bottom grooves 590 in substrate 110S. The substrate is shown ina perspective view, with the front surface being in the XY plane (thisplane is shown as horizontal in FIG. 3, so the layer of FIG. 6A isturned by 90° to extend horizontally rather than vertically; in bothFIGS. 3 and 6A, each layer 310.i extends along the XZ plane). Anysuitable material can be used for substrate 110S, including moldablematerials. Examples include partially cured (B-stage) epoxy, moldingcompounds, polyimide, ceramic, glass, etc. In some embodiments, theentire substrate with the grooves is formed by molding. Other materialsand fabrication methods can also be used; grooves 590 can be formed by amasked etch for example.

Conductive lines or other features 310L (FIG. 6B) are formed in thegrooves by any suitable method, e.g. stencil printing or electrolessplating. Suitable materials include solder (e.g. solder paste withcopper) and possibly other sinterable materials. If desired,photolithographic masking can be used to form the features 310L byplating, sputtering, or other deposition-and-etch methods involvingeither deposition of material 310L over the entire substrate 110S andthen masked removal of the material 310L outside the trenches orincluding lift-off patterning. Lines 310L can be formed from multiplematerials, e.g. a layer of copper and a subsequently deposited layer ofsolder.

FIG. 6C illustrates three layers 310.1, 310.2, 310.3 processed as inFIGS. 6A, 6B and bonded together. In this embodiment, in the top andbottom layers 310.1 and 310.3, the grooves and the lines 310L are formedon one side only, facing the layer 310.2. When the three layers arebrought together, their grooves match, i.e. each groove in one of thelayers faces a groove in the adjacent layer, and the respective lines310L physically contact each other. Thus, each line 310L in layer 310.2physically contacts a line 310L in layer 310.1 or 310.2, possibly alongthe entire length of the line. Consequently, the three layers can bebonded by bonding their matching lines 310L (e.g. by solder reflow ifthe lines 310L have solder surfaces, or by thermocompression, orconductive adhesive deposited into the grooves 590 over the lines 310L,or possibly by other types of bonding). Alternatively or in addition,the layers can be bonded by bonding together their substrates 110S ifthe substrates physically contact each other between the grooves 590.This bonding can use any suitable methods, e.g. direct bonding ordielectric adhesive.

The structure 310 can be diced by known techniques along the planes suchas 314, i.e. parallel to the XY plane. The ends of lines 310L mayprovide contact pads 110C or they may be connected to the contact padsby lines 110L.A as described above in connection with FIGS. 4A and 4B.

FIG. 7 shows another embodiment in which the grooves 590 and the lines310L of adjacent substrates do not match; each line 310L of eachsubstrate can be electrically insulated from all the other lines 310L inthe three layers. The grooves and lines may have any geometry, and anynumber of layers can be present and can be combined with other types oflayers (e.g. without the grooves 590) described above. The grooves maycontain other features, possibly multiple layers of features, e.g.transistor source/drain/channel regions or entire transistors.

FIG. 8A is similar to FIG. 6B, but the lines 310L protrude out of thegrooves, not just cover the grooves' surfaces as in FIG. 6B. In someembodiments (FIG. 8B), the grooves of adjacent layers match each otheras in FIG. 6C, but the lines 310L are formed only on the middle layer310.2; since the lines protrude out of the grooves of layer 310.2, thelines fill the grooves in layers 310.1, 310.3 partially or completelywhen the three layers are joined together (FIG. 8B). Thicker lines areadvantageous for reducing the electrical and thermal resistances, butmaking the lines in only one layer may simplify fabrication. In someembodiments, the lines 310L are formed in layer 310.1 and at the top,but not the bottom, of layer 310.2; layer 310.3 does not have lines 310L(like in FIG. 8B).

The structures of FIGS. 6A through 8B can be augmented with a dielectriclayer (not shown) separating the lines 310L from the substrates 110S ifthe substrates are not dielectric. Other layers, e.g. compliant layerssuch as polyimide, may be formed on the groove sidewalls to reducethermal stresses.

Structure 310 can be diced by the technique described in theaforementioned U.S. Pat. No. 7,833,370 or by other techniques.

In some embodiments (such as described above), each substrate 110S issolid before and after its stacking on an underlying substrate or layer.Alternatively, one or more (possibly all) substrates 110S can be made ofa non-solid material, e.g. from a flowable material (semisolid and/orliquid), and/or from vapor phase. In some embodiments, a flowablematerial is deposited on the underlying layer or substrate by bladecasting or molding or some other method, and then cured to solid phase.Exemplary flowable materials include polyimide and epoxy. Suitableflowable epoxy-based materials include photoresist (such as SU-8) andmolding compounds.

As noted above, one or more (possibly all) substrates 110S can be formedfrom a vapor phase, e.g. by chemical vapor deposition (CVD) on theunderlying substrate or layer. Physical vapor deposition (CVD) and othermethods can be used to form a substrate 110S directly on the underlyingsubstrate or layer.

A substrate 110 may include layers of different materials; for example asubstrate may have a semiconductor layer (possibly silicon) coated withdielectric on top and/or bottom and/or sides.

In some embodiments, the interfaces between adjacent substrates 110S aresharply defined, but interfaces can also blur or disappear due tointerdiffusion of the substrates' materials.

Interposer 110 can have any suitable dimensions. In illustrativeembodiments, the interposer thickness (the Z dimension in FIG. 2) is 10to 1000 microns, and each of the X and Y dimensions is 10 to 100 mm.Other dimensions are also possible. The invention includes interposershaving a thickness greater than the horizontal dimensions (i.e. the Zdimension can be greater than the X and Y dimension). Also, aninterposer can be cubic (i.e. equal dimensions are possible).

Interposers 110 and structures 310 can be of any shapes and sizes. SeeFIGS. 9A, 9B illustrating a structure 310 (FIG. 9A) divided into eightinterposers 110A to 110H (FIG. 9B) by horizontal planes 314H and avertical plane 314V. Plane 314V is parallel to the YZ plane andperpendicular to the interposers' major surfaces which are parallel tothe XZ plane, but the sectional planes 314 do not have to be horizontalor vertical.

In FIG. 10, the structure 310 is singulated along non-planar (e.g.cylindrical) sectional surfaces 314.

Some embodiments of the present invention are defined by the followingclauses.

Clause 1 defines a manufacture comprising a member (possibly aninterposer) operable to function at least as an interconnectionsubstrate providing interconnection between circuit modules if they areconnected to the interconnection substrate. Examples of circuit modulesare die 120 and packaging substrates. In some embodiments, the membermay also provide other, non-interconnection functions via the member'scircuitry.

Further, according to clause 1, the member comprises a plurality ofcontact pads for connection to the circuit modules, and comprisesinterconnection circuitry (e.g. 110L) providing interconnection betweenthe contact pads;

wherein the contact pads comprise one or more first contact pads locatedat a top surface of the member. Of note, the member can be operated atany angle, so the “top surface” is just some surface for ease ofreference below. For example, the top surface can be either the top orbottom surface in FIG. 2, 3, 9B or 10.

Further, according to clause 1, the member comprises a multi-layersubstrate (e.g. a substrate obtained by dicing the structure 310)comprising a plurality of first layers (e.g. 110.i) arranged in sequenceone after another, each first layer being transverse (possibly but notnecessarily perpendicular) to the member's top surface, the first layerscomprising at least a part of the interconnection circuitry.

Clause 2 defines the manufacture of clause 1 wherein at least one firstcontact pad is part of at least one first layer. For example, in FIG. 2,contact pads 110C are part of layer 110.i.

Clause 3 defined the manufacture of clause 1 wherein the membercomprises a dielectric (e.g. 510 in FIG. 4B) overlying the multi-layersubstrate, wherein at least one first contact pad overlies thedielectric.

Clause 4 defines the manufacture of any preceding clause wherein theinterconnection circuitry comprises a continuous non-dielectric featureoverlying two or more first layers. See for example features 110L.A1 inFIG. 4A.

Clause 5 defines the manufacture of any preceding clause wherein themember's top surface comprises an area for attachment of at least onecircuit module which is for connection to at least one first contactpad.

Clause 6 defines the manufacture of any preceding clause furthercomprising a first circuit module having circuitry connected to a firstcontact pad.

Clause 7 defines the manufacture of clause 6 wherein the first circuitmodule is attached to the member's top surface.

Clause 8 defines the manufacture of any preceding clause wherein thefirst layers comprise at least one pair of adjacent first layers, thepair of adjacent first layers comprising circuitry at least partiallypresent at an interface of the first layers of the pair and electricallyconnected to at least one first contact pad, wherein each first layer inthe pair comprises a support substrate (e.g. 110S) for supporting thecircuitry.

Clause 9 defines the manufacture of clause 8 wherein the interfaceextends through the multi-layer substrate to divide the multi-layersubstrate into two parts each of which comprises one and only one firstlayer of the pair.

Clause 10 defines the manufacture of clause 8 wherein at least two ofthe support substrates each comprise ceramic material.

Clause 11 defines a manufacture comprising a member operable to functionat least as an interconnection substrate providing interconnectionbetween circuit modules if they are connected to the interconnectionsubstrate, the member comprising a top surface extending generally alonga first plane (e.g. XY plane), the member comprising a plurality ofcontact pads for connection to the circuit modules, the contact padscomprising one or more first contact pads located at the top surface;

wherein the member comprises a support structure (e.g. made ofsubstrates 110S) supporting the member's circuitry, the membercomprising a conductive line (e.g. 110L.1 in FIG. 4A) extending throughthe support structure between top and bottom surfaces of the supportstructure, wherein at least a segment of the conductive line is notperpendicular to the first plane. For example, line 110L.1 is notperpendicular to the XY plane.

Clause 12 defines the manufacture of clause 11 wherein the conductiveline has no segment perpendicular to the first plane.

Clause 13 defines the manufacture of clause 11 or 12 wherein theconductive line extends generally along a second plane perpendicular tothe first plane. For example, in FIG. 4A, line 110L.1 extends generallyalong the XZ plane which is perpendicular to the XY plane.

Clause 14 defines a method for fabricating one or more first multi-layersubstrates for respective one or more members each of which is operableto function at least as an interconnection substrate for providinginterconnections between circuit modules, each member comprising aplurality of contact pads for connection to the circuit modules. Forexample, each module can be an interposer. A structure 310 may provide anumber of modules, but may also provide just one module; the remainingpieces obtained by the dicing of structure 310 may be discarded; in someembodiments, circuitry 310L is fabricated for just one interposer.

The method of clause 14 comprises:

forming a stack of first layers (e.g. structure 310) to provide amulti-layer structure, the multi-layer structure comprising circuitry;

separating the multi-layer structure into a plurality of multi-layerpieces at least one of which is a first multi-layer substrate whichcomprises a part of each first layer, the first layers' parts extendingto a first side of the first multi-layer substrate, the multi-layersubstrate comprising at least part of the circuitry which is accessiblefrom the first side of the first multi-layer substrate. For example, inFIG. 2, 4A or 4B, the first side could be the top side; the circuitry110L is accessible from the top surface.

Clause 15 defines method of clause 14 further comprising forming one ormore conductive features (e.g. 110L.A) over the first side of the firstmulti-layer substrate, the one or more conductive features comprisingone or more contact pads attachable to the circuit modules.

Clause 16 defines the method of clause 14 or 15 further comprisingattaching one or more circuit modules to the first multi-layer substrateto provide access to said at least part of the circuitry from the one ormore circuit modules.

Clause 17 defines the method of clause 14, 15, or 16 wherein attachingthe one or more circuit modules comprises attaching at least one circuitmodule to the first side of the first multi-layer substrate.

Clause 18 defines the method of clause 14, 15, 16, or 17 furthercomprising attaching a plurality of circuit modules to the firstmulti-layer substrate to interconnect the one or more circuit modulesthrough said at least part of the circuitry.

Clause 19 defines method of clause 14, 15, 16, 17, or 18 wherein atleast one first layer comprises a ceramic substrate.

Clause 20 comprises the method of clause 14, 15, 16, 17, 18, or 19wherein each first layer comprises a ceramic substrate.

The invention is not limited to the embodiments described above. Otherembodiments and variations are within the scope of the invention, asdefined by the appended claims.

The invention claimed is:
 1. A structure comprising a member operable tofunction at least as an interconnection substrate providinginterconnection between circuit modules, the member comprising: aplurality of contact pads for connection to the circuit modules;circuitry connected to the contact pads and comprising a transistor, thecircuitry comprising interconnection circuitry providing interconnectionbetween at least two of the contact pads; wherein the contact padscomprise one or more first contact pads located at a top surface of themember; wherein the member comprises a multi-layer substrate comprisinga plurality of first layers arranged in sequence one after another, eachfirst layer being transverse to the top surface, the first layerscomprising at least a part of the interconnection circuitry, the firstlayers comprising said transistor.
 2. The structure of claim 1 whereinat least one first contact pad is part of at least one first layer. 3.The structure of claim 1 wherein the member comprises a dielectricoverlying the multi-layer substrate, wherein at least one first contactpad overlies the dielectric.
 4. The structure of claim 1 wherein theinterconnection circuitry comprises a continuous non-dielectric featureextending over two or more first layers.
 5. The structure of claim 4wherein the continuous non-dielectric feature is a conductive lineextending over two or more first layers.
 6. The structure of claim 1wherein the interconnection circuitry comprises a multi-levelredistribution layer extending over two or more first layers.
 7. Thestructure of claim 1 wherein the interconnection circuitry comprises aplurality of features extending under two or more first layers.
 8. Thestructure of claim 1 wherein the top surface comprises an area forattachment of at least one circuit module connected to at least onefirst contact pad.
 9. The structure of claim 1 further comprising afirst circuit module having circuitry connected to a first contact pad.10. The structure of claim 9 wherein the first circuit module isattached to the top surface.
 11. A structure comprising a memberoperable to function at least as an interconnection substrate providinginterconnection between circuit modules, the member comprising: aplurality of contact pads for connection to the circuit modules;interconnection circuitry providing interconnection between at least twoof the contact pads; wherein the contact pads comprise one or more firstcontact pads located at a top surface of the member; wherein the membercomprises a multi-layer substrate comprising a plurality of first layersarranged in sequence one after another, each first layer beingtransverse to the top surface, the first layers comprising at least apart of the interconnection circuitry; wherein the first layers compriseat least one pair of adjacent first layers, the pair of adjacent firstlayers comprising circuitry at least partially present at an interfaceof the first layers of the pair and electrically connected to at leastone first contact pad, wherein each first layer in the pair comprises asupport substrate for supporting the circuitry.
 12. The structure ofclaim 11 wherein the interface extends through the multi-layer substrateto divide the multi-layer substrate into two parts each of whichcomprises one and only one first layer of the pair.
 13. The structure ofclaim 11 wherein at least two of the support substrates each compriseceramic material.
 14. The structure of claim 1 wherein the contact padscomprise one or more second contact pads located at a bottom surface ofthe member.
 15. A structure comprising a member operable to function aleast as an interconnection substrate connectable to circuit modules forproviding interconnection between the circuit modules, the membercomprising a top surface extending along a first plane, the membercomprising a plurality of contact pads for connection to the circuitmodules, the contact pads comprising one or more first contact padslocated at the top surface; wherein the member comprises a supportstructure supporting the member's circuitry, the support structurecomprising a plurality of planar layers each of which extends betweentop and bottom surfaces of the support structure, the member comprisinga conductive line extending through the support structure between thetop and bottom surfaces of the support structure along or within one ofthe planar layers, wherein at least a segment of the conductive line isnot perpendicular to the first plane; wherein the member comprises atransistor located inside the member between two of the planar layers,the transistor being accessible from at least one of the contact pads.16. The structure of claim 15 wherein the conductive line has no segmentperpendicular to the first plane.
 17. The structure of claim 15 whereinthe conductive line extends along a second plane perpendicular to thefirst plane.
 18. The method of claim 1 wherein the transistor is a MOStransistor whose gate is formed as at least part of at least one firstlayer.
 19. The method of claim 1 wherein the transistor is a MOStransistor whose source/channel/drain region is formed as at least partof at least one first layer.
 20. The method of claim 1 wherein thetransistor is a MOS transistor comprising a first region and a gateregion that are located on opposite sides of at least one first layer,the first region being a source/drain/channel region.